Spectroscopy and Test Devices

Based on a comprehensive defect-spectroscopic characterization of semiconductor materials (notably GaN, SiC, AlGaN, AlN, GaAs, and InP), test devices can be produced and characterized at an early stage of material development in partnership with the Institute of Applied Physics at TU Bergakademie Freiberg. This facilitates a systematic correlation between material properties and the resulting device characteristics, as well as the identification of defects critical to the devices.

Additionally, the IISB branch in Freiberg allows for addressing custom queries related to process development and the design of test devices. In our flexible, fully CMOS-integrated cleanroom facility, we can both individually adapt processes and correlate material properties with device performance to identify critical material defects.

Key topics and competences

• Wide-Bandgap (WBG) / Ultrawide-Bandgap (UWBG) based (test)devices
• Atomic layer processing: Atomic Layer Deposition (ALD) and Atomic Layer Etching (ALE)
• Device characterization using current-voltage and capacitance-voltage curves (IV/CV), as well as interface defects (Dit) and deep-level defects in the bandgap using Deep Level Transient Spectroscopy (DLTS) and related methods

Services

• Customer-specific challenges in process development
• Development of device processing steps (ALD, ALE, passivation, etching, metallization)
• Single process evaluation using various test devices
• Support for single process technology development
• Customized design of test devices
• Identification of device-critical defects and their correlation to device properties and device characterization
• Electrical characterization of devices at wafer level by IV, CV measurements and determination of interface traps

The variability of semiconductor substrates for applications in power and communication electronics has been rapidly increasing in recent years. In this context, compound semiconductors play a significant role. These materials exhibit physical properties that surpass those of established silicon for these applications. Moreover, defects in these materials are candidates for the realization of individual quantum states for future highly sensitive quantum sensors or ultra-high-performance quantum computers.

We provide extensive expertise in characterizing the electrical properties of various crystal and wafer materials, as well as partially and fully processed devices. This enables us to perform service measurements with a short turnaround time for our clients. Additionally, we leverage this toolkit, particularly the capability to fabricate various test devices, to identify critical defects affecting the performance and reliability of the components, understand their origins, and collaborate with our clients to find solutions to mitigate these critical defects.

Key topics and competences

• Semiconductor material characterization, especially electrical defect spectroscopy of crystals and epitaxial layers using:
  • DLTS, optical DLTS
  • IV and CV measurements